|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMDQ65R010M2HXUMA1
- Infineon Technologies
-
1:
NT$700.74
-
1,165庫存量
-
1,500在途量
-
新產品
|
Mouser 元件編號
726-IMDQ65R010M2HXUM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,165庫存量
1,500在途量
在途量:
750 預期2026/2/26
750 預期2026/4/16
|
|
|
NT$700.74
|
|
|
NT$597.72
|
|
|
NT$517.14
|
|
|
NT$516.46
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HDSOP-22
|
N-Channel
|
1 Channel
|
650 V
|
154 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
113 nC
|
- 55 C
|
+ 175 C
|
651 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMBG65R075M2HXTMA1
- Infineon Technologies
-
1:
NT$207.74
-
731庫存量
-
新產品
|
Mouser 元件編號
726-IMBG65R075M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
731庫存量
|
|
|
NT$207.74
|
|
|
NT$145.18
|
|
|
NT$117.64
|
|
|
NT$105.06
|
|
|
NT$89.08
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
|
+ 175 C
|
124 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMLT65R075M2HXTMA1
- Infineon Technologies
-
1:
NT$176.12
-
725庫存量
-
新產品
|
Mouser 元件編號
726-IMLT65R075M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
725庫存量
|
|
|
NT$176.12
|
|
|
NT$129.20
|
|
|
NT$104.38
|
|
|
NT$92.82
|
|
|
NT$79.56
|
|
|
NT$79.22
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
650 V
|
34.7 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
187 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMT65R075M2HXUMA1
- Infineon Technologies
-
1:
NT$205.36
-
800庫存量
-
新產品
|
Mouser 元件編號
726-IMT65R075M2HXUMA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
800庫存量
|
|
|
NT$205.36
|
|
|
NT$143.48
|
|
|
NT$115.94
|
|
|
NT$103.02
|
|
|
檢視
|
|
|
NT$88.40
|
|
|
NT$88.40
|
|
|
NT$88.40
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
|
TOLL-8
|
|
|
650 V
|
|
75 mOhms
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMTA65R075M2HXTMA1
- Infineon Technologies
-
1:
NT$179.52
-
737庫存量
-
新產品
|
Mouser 元件編號
726-IMTA65R075M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
737庫存量
|
|
|
NT$179.52
|
|
|
NT$120.02
|
|
|
NT$85.34
|
|
|
NT$70.72
|
|
|
NT$66.98
|
|
|
NT$66.98
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
LHSOF-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
141 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 750 V G2
- IMTA65R026M2HXTMA1
- Infineon Technologies
-
1:
NT$366.86
-
155庫存量
-
新產品
|
Mouser 元件編號
726-IMTA65R026M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 750 V G2
|
|
155庫存量
|
|
|
NT$366.86
|
|
|
NT$287.30
|
|
|
NT$239.36
|
|
|
NT$213.18
|
|
|
NT$180.88
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
79 A
|
33 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
357 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V G2
- IMTA65R033M2HXTMA1
- Infineon Technologies
-
1:
NT$313.14
-
145庫存量
-
2,000預期2026/2/16
-
新產品
|
Mouser 元件編號
726-IMTA65R033M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V G2
|
|
145庫存量
2,000預期2026/2/16
|
|
|
NT$313.14
|
|
|
NT$232.90
|
|
|
NT$194.14
|
|
|
NT$174.08
|
|
|
NT$147.56
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
PG-LHSOF-4
|
N-Channel
|
|
650 V
|
68 A
|
41 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R075M2HXKSA1
- Infineon Technologies
-
1:
NT$211.82
-
86庫存量
-
240預期2026/7/9
-
新產品
|
Mouser 元件編號
726-IMW65R075M2HXKSA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
86庫存量
240預期2026/7/9
|
|
|
NT$211.82
|
|
|
NT$162.18
|
|
|
NT$131.24
|
|
|
NT$116.62
|
|
|
NT$99.62
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R075M2HXKSA1
- Infineon Technologies
-
1:
NT$231.20
-
218庫存量
-
新產品
|
Mouser 元件編號
726-IMZA65R075M2HXKS
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
218庫存量
|
|
|
NT$231.20
|
|
|
NT$168.98
|
|
|
NT$136.68
|
|
|
NT$121.38
|
|
|
NT$104.04
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
26.6 A
|
95 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
14.9 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMLT65R015M2HXTMA1
- Infineon Technologies
-
1:
NT$520.20
-
2,073庫存量
-
新產品
|
Mouser 元件編號
726-IMLT65R015M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
2,073庫存量
|
|
|
NT$520.20
|
|
|
NT$402.56
|
|
|
NT$348.16
|
|
|
NT$345.10
|
|
|
NT$344.76
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
|
15 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMT65R010M2HXUMA1
- Infineon Technologies
-
1:
NT$676.94
-
1,914庫存量
-
新產品
|
Mouser 元件編號
726-IMT65R010M2HXUMA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,914庫存量
|
|
|
NT$676.94
|
|
|
NT$577.32
|
|
|
NT$523.26
|
|
|
NT$477.70
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
168 A
|
13.1 mOhms
|
- 7V, + 23 V
|
4.5 V
|
113 nC
|
- 55 C
|
+ 175 C
|
681 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMT65R050M2HXUMA1
- Infineon Technologies
-
1:
NT$238.34
-
1,992庫存量
-
新產品
|
Mouser 元件編號
726-IMT65R050M2HXUMA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,992庫存量
|
|
|
NT$238.34
|
|
|
NT$174.42
|
|
|
NT$141.10
|
|
|
NT$125.46
|
|
|
NT$121.72
|
|
|
NT$103.02
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
48.1 A
|
62 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
22 nC
|
- 55 C
|
+ 175 C
|
237 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R040M2HXKSA1
- Infineon Technologies
-
1:
NT$306.34
-
5,088庫存量
-
新產品
|
Mouser 元件編號
726-IMZA65R040M2HXKS
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
5,088庫存量
|
|
|
NT$306.34
|
|
|
NT$180.20
|
|
|
NT$152.66
|
|
|
NT$142.46
|
|
|
NT$141.78
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
49 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
28 nC
|
- 55 C
|
+ 175 C
|
172 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMLT65R020M2HXTMA1
- Infineon Technologies
-
1:
NT$430.10
-
1,845庫存量
-
新產品
|
Mouser 元件編號
726-IMLT65R020M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,845庫存量
|
|
|
NT$430.10
|
|
|
NT$350.20
|
|
|
NT$291.72
|
|
|
NT$260.10
|
|
|
NT$220.66
|
|
|
NT$220.66
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
|
20 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMLT65R050M2HXTMA1
- Infineon Technologies
-
1:
NT$234.94
-
1,853庫存量
-
新產品
|
Mouser 元件編號
726-IMLT65R050M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,853庫存量
|
|
|
NT$234.94
|
|
|
NT$172.04
|
|
|
NT$139.06
|
|
|
NT$123.76
|
|
|
NT$109.48
|
|
|
NT$109.14
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
|
50 mOhms
|
|
|
|
|
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMT65R033M2HXUMA1
- Infineon Technologies
-
1:
NT$328.44
-
1,756庫存量
-
新產品
|
Mouser 元件編號
726-IMT65R033M2HXUMA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,756庫存量
|
|
|
NT$328.44
|
|
|
NT$244.46
|
|
|
NT$203.66
|
|
|
NT$182.58
|
|
|
NT$155.04
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMT65R060M2HXUMA1
- Infineon Technologies
-
1:
NT$201.96
-
1,569庫存量
-
新產品
|
Mouser 元件編號
726-IMT65R060M2HXUMA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,569庫存量
|
|
|
NT$201.96
|
|
|
NT$152.66
|
|
|
NT$123.42
|
|
|
NT$109.82
|
|
|
NT$106.42
|
|
|
NT$90.10
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
41.4 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
19 nC
|
- 55 C
|
+ 175 C
|
208 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
NT$359.38
-
282庫存量
-
新產品
|
Mouser 元件編號
726-IMW65R033M2HXKSA
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
282庫存量
|
|
|
NT$359.38
|
|
|
NT$281.18
|
|
|
NT$234.26
|
|
|
NT$208.42
|
|
|
NT$177.14
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
53 A
|
41 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
194 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMW65R040M2HXKSA1
- Infineon Technologies
-
1:
NT$317.22
-
511庫存量
-
新產品
|
Mouser 元件編號
726-IMW65R040M2HXKSA
新產品
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
511庫存量
|
|
|
NT$317.22
|
|
|
NT$200.26
|
|
|
NT$186.66
|
|
|
NT$165.92
|
|
|
NT$152.32
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
49 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
28 nC
|
- 55 C
|
+ 175 C
|
172 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMZA65R026M2HXKSA1
- Infineon Technologies
-
1:
NT$427.04
-
258庫存量
-
新產品
|
Mouser 元件編號
726-IMZA65R026M2HXKS
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
258庫存量
|
|
|
NT$427.04
|
|
|
NT$318.92
|
|
|
NT$276.08
|
|
|
NT$260.78
|
|
|
NT$221.34
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
64 A
|
33 mOhms
|
- 10 V, + 25 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET SILICON CARBIDE MOSFET
- IMZA65R007M2HXKSA1
- Infineon Technologies
-
1:
NT$958.12
-
1,178庫存量
|
Mouser 元件編號
726-IMZA65R007M2HXKS
|
Infineon Technologies
|
碳化矽MOSFET SILICON CARBIDE MOSFET
|
|
1,178庫存量
|
|
|
NT$958.12
|
|
|
NT$622.20
|
|
|
NT$616.76
|
|
|
NT$616.42
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
210 A
|
8.5 mOhms
|
- 18 V, + 18 V
|
5.6 V
|
439 nC
|
- 55 C
|
+ 175 C
|
625 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R010M2HXTMA1
- Infineon Technologies
-
1:
NT$715.70
-
364庫存量
-
新產品
|
Mouser 元件編號
726-IMBG65R010M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
364庫存量
|
|
|
NT$715.70
|
|
|
NT$610.30
|
|
|
NT$527.68
|
|
|
NT$527.68
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
158 A
|
13.1 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
112 nC
|
- 55 C
|
+ 175 C
|
535 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R026M2HXTMA1
- Infineon Technologies
-
1:
NT$388.28
-
980庫存量
-
新產品
|
Mouser 元件編號
726-IMBG65R026M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
980庫存量
|
|
|
NT$388.28
|
|
|
NT$316.20
|
|
|
NT$263.50
|
|
|
NT$234.94
|
|
|
NT$198.90
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
33 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
42 nC
|
- 55 C
|
+ 175 C
|
263 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R033M2HXTMA1
- Infineon Technologies
-
1:
NT$343.74
-
285庫存量
-
新產品
|
Mouser 元件編號
726-IMBG65R033M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
285庫存量
|
|
|
NT$343.74
|
|
|
NT$260.78
|
|
|
NT$217.26
|
|
|
NT$193.46
|
|
|
NT$172.38
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
41 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
- IMBG65R060M2HXTMA1
- Infineon Technologies
-
1:
NT$232.90
-
456庫存量
-
新產品
|
Mouser 元件編號
726-IMBG65R060M2HXTM
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m?
|
|
456庫存量
|
|
|
NT$232.90
|
|
|
NT$170.68
|
|
|
NT$138.04
|
|
|
NT$123.42
|
|
|
NT$104.72
|
|
最少： 1
倍數： 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
34.9 A
|
73 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
18 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
臺灣