|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
NT$712.34
-
198庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R018CM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
198庫存量
|
|
|
NT$712.34
|
|
|
NT$542.41
|
|
|
NT$452.07
|
|
|
NT$389.69
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
NT$475.01
-
235庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R036AM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
235庫存量
|
|
|
NT$475.01
|
|
|
NT$353.84
|
|
|
NT$295.05
|
|
|
NT$254.18
|
|
|
NT$245.57
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
NT$1,456.23
-
300庫存量
-
480預期2026/6/18
-
新產品
|
Mouser 元件編號
726-IMZC120R007M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
300庫存量
480預期2026/6/18
|
|
|
NT$1,456.23
|
|
|
NT$1,046.10
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
NT$463.18
-
202庫存量
-
新產品
|
Mouser 元件編號
726-IMY120R036CM2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
202庫存量
|
|
|
NT$463.18
|
|
|
NT$345.24
|
|
|
NT$287.88
|
|
|
NT$247.72
|
|
|
NT$239.48
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
NT$1,527.57
-
621庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R012M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
621庫存量
|
|
|
NT$1,527.57
|
|
|
NT$1,205.28
|
|
|
NT$1,132.86
|
|
|
NT$1,132.86
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
NT$618.05
-
1,665庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1,665庫存量
|
|
最少： 1
倍數： 1
最大： 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
NT$506.20
-
1,855庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R026M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1,855庫存量
|
|
|
NT$506.20
|
|
|
NT$359.22
|
|
|
NT$295.40
|
|
|
NT$289.67
|
|
|
NT$277.48
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
NT$404.03
-
270庫存量
-
750預期2026/7/2
-
新產品
|
Mouser 元件編號
726-IMCQ120R040M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
270庫存量
750預期2026/7/2
|
|
|
NT$404.03
|
|
|
NT$279.27
|
|
|
NT$216.53
|
|
|
NT$203.27
|
|
|
NT$203.27
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
NT$337.35
-
375庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R053M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
375庫存量
|
|
|
NT$337.35
|
|
|
NT$222.99
|
|
|
NT$172.08
|
|
|
NT$161.33
|
|
|
NT$161.33
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
NT$297.56
-
869庫存量
-
新產品
|
Mouser 元件編號
726-IMCQ120R078M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
869庫存量
|
|
|
NT$297.56
|
|
|
NT$202.19
|
|
|
NT$148.06
|
|
|
NT$135.51
|
|
|
NT$135.51
|
|
最少： 1
倍數： 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
NT$842.48
-
712庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R026M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
712庫存量
|
|
|
NT$842.48
|
|
|
NT$617.34
|
|
|
NT$570.37
|
|
|
NT$535.96
|
|
|
NT$535.96
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
NT$665.38
-
670庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R040M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
670庫存量
|
|
|
NT$665.38
|
|
|
NT$478.60
|
|
|
NT$421.95
|
|
|
NT$397.94
|
|
|
NT$397.94
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
-
1:
NT$568.22
-
331庫存量
-
新產品
|
Mouser 元件編號
726-IMSQ120R053M2HHX
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
331庫存量
|
|
|
NT$568.22
|
|
|
NT$404.03
|
|
|
NT$341.29
|
|
|
NT$320.50
|
|
|
NT$320.50
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
NT$954.69
-
134庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
134庫存量
|
|
最少： 1
倍數： 1
最大： 10
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
NT$720.59
-
147庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R017M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
147庫存量
|
|
最少： 1
倍數： 1
最大： 30
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
NT$535.60
-
182庫存量
-
新產品
|
Mouser 元件編號
726-IMZA120R026M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
182庫存量
|
|
|
NT$535.60
|
|
|
NT$326.24
|
|
|
NT$291.82
|
|
最少： 1
倍數： 1
最大： 120
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
NT$954.69
-
242庫存量
-
480預期2026/6/18
-
新產品
|
Mouser 元件編號
726-IMZC120R012M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
242庫存量
480預期2026/6/18
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
NT$768.27
-
414庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R017M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
414庫存量
|
|
最少： 1
倍數： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
NT$561.41
-
483庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R026M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
483庫存量
|
|
最少： 1
倍數： 1
最大： 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
NT$449.56
-
826庫存量
-
240預期2026/6/11
-
新產品
|
Mouser 元件編號
726-IMZC120R034M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
826庫存量
240預期2026/6/11
|
|
最少： 1
倍數： 1
最大： 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
NT$364.24
-
804庫存量
-
新產品
|
Mouser 元件編號
726-IMZC120R053M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
804庫存量
|
|
|
NT$364.24
|
|
|
NT$214.74
|
|
|
NT$181.76
|
|
|
NT$181.40
|
|
|
NT$176.38
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
NT$1,293.11
-
1,408庫存量
-
1,000預期2026/10/15
|
Mouser 元件編號
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,408庫存量
1,000預期2026/10/15
|
|
|
NT$1,293.11
|
|
|
NT$970.82
|
|
|
NT$970.82
|
|
最少： 1
倍數： 1
最大： 10
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
NT$680.43
-
3,338庫存量
|
Mouser 元件編號
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,338庫存量
|
|
|
NT$680.43
|
|
|
NT$487.56
|
|
|
NT$436.65
|
|
|
NT$435.22
|
|
|
NT$404.03
|
|
最少： 1
倍數： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
- IMCQ120R007M2HXTMA1
- Infineon Technologies
-
1:
NT$1,518.61
-
89庫存量
-
1,500在途量
-
新產品
|
Mouser 元件編號
726-IMCQ120R007M2HXT
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
|
|
89庫存量
1,500在途量
|
|
|
NT$1,518.61
|
|
|
NT$1,239.33
|
|
|
NT$1,094.86
|
|
|
NT$1,029.25
|
|
|
NT$1,029.25
|
|
最少： 1
倍數： 1
:
750
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CoolSiC
|
|
|
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
NT$618.05
-
111庫存量
-
240預期2026/6/11
-
新產品
|
Mouser 元件編號
726-IMZA120R022M2HXK
新產品
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
111庫存量
240預期2026/6/11
|
|
最少： 1
倍數： 1
最大： 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
臺灣