650V 3rd Gen SiC MOSFETs

STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.

結果: 10
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
資格
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
規格書
872庫存量
最少： 1
倍數： 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 60 A 39.3 mOhms - 10 V, + 22 V 3 V 48.6 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
規格書
1,754庫存量
最少： 1
倍數： 1
: 1,800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 3 V 31 nC - 55 C + 175 C 234 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
規格書
465庫存量
最少： 1
倍數： 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 77 nC - 55 C + 200 C 398 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
規格書
517庫存量
最少： 1
倍數： 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
規格書
481庫存量
最少： 1
倍數： 1

Through Hole HiP247-4 N-Channel 1 Channel 650 V 30 A 63 mOhms - 10 V, + 22 V 3 V 37.5 nC - 55 C + 200 C 240 W Enhancement AEC-Q101


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
規格書
54庫存量
1,000在途量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms - 18 V, + 18 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
規格書
852庫存量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

SMD/SMT N-Channel 1 Channel 650 V 30 A 40 mOhms - 10 V, + 22 V 4.2 V 39.5 nC - 55 C + 175 C 221 W Enhancement AEC-Q101
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
規格書
8庫存量
1,800預期2026/7/13
最少： 1
倍數： 1
: 1,800

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 35 A 63 mOhms - 10 V, + 22 V 3 V 42.5 nC - 55 C + 175 C 288 W Enhancement


STMicroelectronics 碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
規格書
16庫存量
600預期2026/10/5
最少： 1
倍數： 1

Through Hole HiP-247-4 N-Channel 1 Channel 650 V 30 A 72 mOhms - 18 V, + 18 V 4.2 V 32 nC - 55 C + 200 C 210 W Enhancement AEC-Q100
STMicroelectronics 碳化矽MOSFET Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
規格書
無庫存前置作業時間 21 週
最少： 1,000
倍數： 1,000
: 1,000

SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 27 mOhms -10 V, 22 V 4.2 V 79.4 nC - 55 C + 175 C 385 W Enhancement