onsemi 碳化矽MOSFET

結果: 217
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TOLL 3,950庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 27.8 A 58 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement SiC FET
onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L 967庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 104 A 20 mOhms - 10 V, + 22 V 4.63 V 337 nC - 55 C + 175 C 454 W Enhancement EliteSiC
onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L 818庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 58 A 30 mOhms - 10 V, + 22 V 4.4 V 20 nC - 55 C + 175 C 234 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS D2PAK-7L 70MOHM 1200V M3 1,569庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 25 A 87 mOhms - 10 V, + 22 V 4.4 V 57 nC - 55 C + 175 C 172 W Enhancement EliteSiC
onsemi 碳化矽MOSFET SIC MOS TO247-4L 30MOHM 1200V M3 121庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 28.5 mOhms - 8 V, + 22 V 3.13 V 107 nC - 55 C + 175 C 308 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 440庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 5 V, + 18 V 4.3 V 50 nC - 55 C + 175 C 64 W Enhancement EliteSiC

onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L 400庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 12 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 448庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 19 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-3L 650V 445庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 44 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L 439庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 34 A 87 mOhms - 10 V, + 22 V 4.4 V 57 nC - 55 C + 175 C 160 W Enhancement EliteSiC
onsemi 碳化矽MOSFET 1200V/400MOSICFETG3TO263-7 1,956庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1700V/400MOSICFETG3TO263-7 1,341庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/70MOSICFETG4TO247-3 674庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
onsemi 碳化矽MOSFET 1200V/70MOSICFETG4TO247-4 416庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO263-7 904庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi 碳化矽MOSFET 750V/11MOSICFETG4TO263-7 347庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7L N-Channel 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi 碳化矽MOSFET 750V/23MOSICFETG4TOLL 1,271庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 64 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L 155庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 71 A 40 mOhms - 15 V, + 25 V 4.3 V 222 nC - 55 C + 175 C 428 W Enhancement EliteSiC
onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L 827庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 1.2 kV 30 Ohms EliteSiC
onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L 334庫存量
最少: 1
倍數: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 14mohm, 1200V, M3P, TO-247-4L 81庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 127 A 20 mOhms - 10 V, + 22 V 4.63 V 329 nC - 55 C + 175 C 686 W Enhancement EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 650V 158庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L 128庫存量
450預期2026/2/20
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 81 A 40 mOhms - 15 V, + 25 V 4.3 V 200 nC - 55 C + 175 C 535 W Enhancement EliteSiC

onsemi 碳化矽MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, TO-247-4L 570庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 1.2 kV 30 Ohms EliteSiC

onsemi 碳化矽MOSFET SIC MOS TO247-4L 40MOHM 1200V M3 350庫存量
900預期2026/2/17
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 51 A 52 mOhms - 10 V, + 22 V 4.4 V 70 nC - 55 C + 175 C 329 W Enhancement EliteSiC