CoolSiC™ G2碳化矽MOSFET

英飛凌CoolSiC™ G2碳化矽MOSFET可在所有常見功率變換應用(AC-DC、DC-DC和DC-AC)中達到最高品質標準的同時,實現優異的SiC性能水準。SiC MOSFET可為光電變換器、儲能系統、電動車充電、電源供應器和馬達驅動器提供比Si替代品更高的性能。英飛凌CoolSiC G2 MOSFET進一步推進了獨特的XT互連技術 (例如TO-263-7和TO-247-4分立式外殼),克服了在保持散熱能力的同時提高半導體晶片性能的共同挑戰。G2的散熱能力提高了12%,將晶片的性能提升至SiC性能的強勁水平。

結果: 39
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2 1,391庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 103 A 20 mOhms - 7 V to + 23 V 5.6 V 74 nC - 55 C + 175 C 394 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 750 V G2 1,071庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 222 A 8.5 mOhms - 7 V to + 23 V 5.6 V 171 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2 643庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 70 A 31 mOhms - 7 V to + 23 V 5.6 V 49 nC - 55 C + 175 C 272 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive Power Device 750 V G2 710庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 30 A 78 mOhms - 7 V to + 23 V 5.6 V 20 nC - 55 C + 175 C 128 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 731庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 28 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC + 175 C 124 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 750 V G2 754庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 103 A 20 mOhms - 7 V to + 23 V 5.6 V 74 nC - 55 C + 175 C 394 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 725庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT HDSOP-16 N-Channel 1 Channel 650 V 34.7 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 187 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 800庫存量
最少: 1
倍數: 1
: 2,000

TOLL-8 650 V 75 mOhms
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 737庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT LHSOF-4 N-Channel 1 Channel 650 V 30 A 95 mOhms 5.6 V 14.9 nC - 55 C + 175 C 141 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 750 V G2 162庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 70 A 31 mOhms - 7 V to + 23 V 5.6 V 49 nC - 55 C + 175 C 272 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 750 V G2 171庫存量
最少: 1
倍數: 1
: 750

SMD/SMT PG-HDSOP-22 N-Channel 840 V 30 A 78 mOhms - 7 V to + 23 V 5.6 V 20 nC - 55 C + 175 C 128 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 86庫存量
240預期2026/7/9
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 218庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 5,088庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 511庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 925庫存量
1,000預期2026/10/29
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 238 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 789 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,178庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 210 A 8.5 mOhms - 18 V, + 18 V 5.6 V 439 nC - 55 C + 175 C 625 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 222庫存量
240在途量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 394庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,063庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 103 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 361庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1,054庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 1,189庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package 3,648庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 136庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC