CoolSiC ™ 650V G2碳化矽MOSFET

英飛凌CoolSiC™ 650V G2碳化矽MOSFET利用碳化矽的性能優勢,通過降低能量損耗來提高功率轉換過程中的效率,這為光伏、儲能、直流電動車充電、馬達驅動和工業電源等各種功率半導體應用提供了優勢。配備CoolSiC G2的電動車直流快速充電站,可比前一代產品減少10%的功率損耗,同時在不影響外形尺寸的情況下實現更高的充電容量。

結果: 53
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 公司名稱
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 258庫存量
最少: 1
倍數: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 196 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 447庫存量
最少: 1
倍數: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 94 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 499 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 624庫存量
最少: 1
倍數: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 97 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 394 W Enhancement
Infineon Technologies 碳化矽MOSFET Leverages switching performance while enabling the benefits of top-side cooling 1,048庫存量
1,800預期2026/2/20
最少: 1
倍數: 1
: 1,800

SMD/SMT N-Channel 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET Leverages switching performance while enabling the benefits of top-side cooling 1,676庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT N-Channel 1 Channel 650 V 68 A 41 mOhms - 10 V, + 25 V 5.6 V 34 nC - 55 C + 175 C 312 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,627庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 40 mOhms Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,783庫存量
最少: 1
倍數: 1
: 1,800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 60 mOhms Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 682庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,960庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 81 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,868庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 58.7 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 277 W Enhancement
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 650 V, 10 mohm G2 348庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 480庫存量
240預期2026/6/18
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 122庫存量
240預期2026/8/20
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 83 A 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 273 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 650 V, 26 mohm G2 380庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 394庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 650 V, 10 mohm G2 243庫存量
480預期2026/2/16
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 1,063庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 103 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 361庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 136庫存量
最少: 1
倍數: 1
: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 650 V, 60 mohm G2 262庫存量
最少: 1
倍數: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET CoolSiC MOSFET 650 V, 60 mohm G2 299庫存量
最少: 1
倍數: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 343庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 40 mOhms Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 333庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 50 mOhms Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET 276庫存量
最少: 1
倍數: 1
: 2,000

SMD/SMT TO-263-7 N-Channel 1 Channel 60 mOhms Enhancement CoolSiC
Infineon Technologies 碳化矽MOSFET SILICON CARBIDE MOSFET
1,996預期2027/2/3
最少: 1
倍數: 1
: 2,000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC