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onsemi UF3SC High-Performance SiC FETs in D2-PAK

onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.

Features

  • 650V 30mΩ and 40mΩ; and 1200V 40mΩ
  • ESD protected and HBM class 2
  • Gate-drive characteristics with drop-in replacement
  • 175°C maximum operating temperature
  • 43nC low gate charge
  • 5V typical threshold voltage
  • Kelvin source pin for optimized switching performance

Applications

  • Telecom and server power
  • Motor drives
  • Induction heating
  • Industrial power supplies
  • Power factor correction modules

Package Outline

Resources

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零件編號 規格書 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Pd - 功率消耗 下降時間 上升時間 標準斷開延遲時間 標準開啟延遲時間
UF3SC065040B7S UF3SC065040B7S 規格書 650 V 43 A 42 mOhms 195 W 9 ns, 12 ns 24 ns, 27 ns 45 ns, 47 ns 22 ns
UF3SC120040B7S UF3SC120040B7S 規格書 1.2 kV 47 A 35 mOhms 214 W 7 ns, 8 ns 12 ns, 13 ns 47 ns 37 ns
UF3SC065030B7S UF3SC065030B7S 規格書 650 V 62 A 27 mOhms 214 W 11 ns, 9 ns 26 ns, 28 ns 46 ns 23 ns
發佈日期: 2021-05-27 | 更新日期: 2025-07-25